Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source
- 1 October 1983
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 1 (4) , 1113-1116
- https://doi.org/10.1116/1.582645