Pressure dependence of light-hole transport in strained InGaAs/GaAs
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 229 (1-3) , 122-125
- https://doi.org/10.1016/0039-6028(90)90850-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Subbands and Landau levels in the two-dimensional hole gas at the GaAs-As interfacePhysical Review B, 1985
- Light-hole conduction in InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971