FET noise model and on-wafer measurement of noise parameters
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1117-1120 vol.3
- https://doi.org/10.1109/mwsym.1991.147212
Abstract
A noise model of a microwave FET (M.W. Pospieszalski 1988, 1989) is verified with on-wafer S-parameters and noise parameter measurement data. An excellent agreement between the model prediction and measurement results is obtained for a wide range of FET bias. It is shown that the equivalent drain temperature is a very strong function of the drain current, while the equivalent gate temperature is a very weak function of the drain current and, within the measurement error, it is equal to the ambient temperature for small drain current.Keywords
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