Fermi-level dependent diffusion of ion-implanted arsenic in germanium

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Abstract
The diffusion of arsenic has been studied in 〈100〉 Ge, implanted with 1⋅10 15 , 120-keV 75 As + ions/cm 2 . The implanted samples were subjected to annealing in argon atmosphere in the temperature range of 450–550 °C. The annealing times varied between 0.5 and 91 h. The As concentration profiles were measured by secondary ion mass spectrometry. A Fermi-level-dependent diffusion of As atoms was observed and quantitatively explained by diffusion via Ge vacancies with charge states 0 and 2-. The activation energies and pre-exponential factors for As diffusion through neutral Ge vacancies was found to be 3.4±0.3 eV and 2.02×10 20 nm 2 /s , respectively, and through doubly negatively charged vacancies 2.9±0.3 eV and 1.89×10 16 nm 2 /s , respectively. The solid solubility limit of As increases with temperature from about 1×10 19 cm −3 at 450 °C to about 5×10 19 cm −3 at 550 °C.

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