Strong 〈100〉 texture formation of polycrystalline silicon films on amorphous insulator by laser recrystallization

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Abstract
This letter demonstrates the optimization for the strong 〈100〉 texture formation of low pressure chemical vapor deposited (700 °C) polycrystalline silicon films on SiO2/backing substrates such as quartz glass, sapphire, and silicon by cw Ar ion laser recrystallization. We have examined the correlation of 〈100〉 texture formed with both the dwell time and the grain size. It has been found that the long dwell time (∼30 ms) and rather low laser power density are favorable for the formation of the strong 〈100〉 texture with lamellalike grains.