Polarization-induced electron populations
- 14 August 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (7) , 990-992
- https://doi.org/10.1063/1.1288817
Abstract
Electron populations induced by spontaneous and piezoelectric polarization in semiconductor heterostructures can be estimated simply by using elementary electrostatic theory. The method is illustrated for the AlGaN/GaN system in which the AlGaN barrier is either undoped, or doped n type, and the effect of a GaN overlayer is described.Keywords
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