InGaAs photodetector with integrated biasing network for mm-wave applications
- 1 January 1998
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Xi A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor significantly reduces the output standing wave ratio. Application of the photodetector in a mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achievedKeywords
This publication has 2 references indexed in Scilit:
- Waveguide integrated 1.55 µm photodetectorwith 45 GHz bandwidthElectronics Letters, 1996
- Optical millimetre-wave generation and transmissionexperiments for mobile 60 GHz band communicationsElectronics Letters, 1996