LSI Pattern Generation and Replication by Electron Beams

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Abstract
The combined use of the digitally controlled single electron beam pattern generator to make micron-scale LSI patterns and the 1:1 electron image projection system to replicate these patterns on device substrates represents a practical means for realizing high-density integrated circuits in large volume production. After six years of research and development at Westinghouse, most of the obstacles to successful use of these methods have been removed. Among the problems solved are uniform exposure of points, lines, and areas in a device pattern, fabrication of high-resolution electromasks for the electron image projector, and registration of successive device patterns in both electron beams systems, used in combination. In the most recent work, a 1024-bit random access memory was used as a test vehicle. Eight mask levels were involved, including a buried diffusion. In both machines, alignment of a new pattern with a preexisting pattern on the substrate was obtained through electron beam probing of fiducial mark areas. An automatic alignment system developed for the electron image projection system made possible alignment within a few seconds and subsequent controlled exposure. Including alignment errors originating in the electron beam mask generator, over-all pattern registrations were within ±1.5μ.

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