Development of self-pulsations due to self-annealing of proton bombarded regions during aging in proton bombarded stripe-geometry AlGaAs DH lasers grown by molecular beam epitaxy
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (8) , 898-901
- https://doi.org/10.1109/jqe.1980.1070586
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Very low current threshold GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Pulsations and absorbing defects in (Al,Ga)As injection lasersJournal of Applied Physics, 1979
- Microscale degradation in (GaAl)As double-heterostructure diode lasersApplied Physics Letters, 1977
- Electrical measurement of the lateral spread of the proton isolation layer in GaAsJournal of Applied Physics, 1977
- Observation of second derivatives of the electrical characteristics of double-heterostructure junction lasersIEEE Transactions on Electron Devices, 1976
- Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasersApplied Physics Letters, 1976
- An analysis of pulsation in coupled-cavity structure semiconductor lasersIEEE Journal of Quantum Electronics, 1973
- Observation of Pulsation from a Double-Heterostructure Injection Laser Due to Lateral Optical CouplingApplied Physics Letters, 1971
- A theory of oscillations in the output of GaAs junction lasersPhysica Status Solidi (a), 1970
- Coupled Longitudinal Mode Pulsing in Semiconductor LasersPhysical Review Letters, 1969