AlGaN/GaN HEMTs-an overview of device operation and applications
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- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 90 (6) , 1022-1031
- https://doi.org/10.1109/jproc.2002.1021567
Abstract
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.Keywords
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