ODMR of bound excitons in Mg-doped GaN
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 120-123
- https://doi.org/10.1016/s0921-4526(99)00421-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optical detection of electron paramagnetic resonance in electron-irradiated GaNPhysical Review B, 1999
- Origin of defect-related photoluminescence bands in doped and nominally undoped GaNPhysical Review B, 1999
- Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic FieldsPhysica Status Solidi (b), 1998
- Optical detection of magnetic resonance in electron-irradiated GaNPhysical Review B, 1997
- Gallium vacancies and the yellow luminescence in GaNApplied Physics Letters, 1996
- Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor depositionPhysical Review B, 1995
- ODMR Studies of MOVPE-Grown GaN Epitaxial LayersMaterials Science Forum, 1993
- Magneto-Optical Characterization of Isoelectronic Complex Defects in SemiconductorsDefect and Diffusion Forum, 1989