III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

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1 January 1996

journal article
Published by Springer Nature in MRS Proceedings

Vol. 449
https://doi.org/10.1557/proc-449-129

Abstract

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Keywords

This publication has 2 references indexed in Scilit:

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
Applied Physics Letters, 1995
GaN Growth Using GaN Buffer Layer
Japanese Journal of Applied Physics, 1991