Thickness variation of breakdown field strength in plasma oxidized aluminum films

1 January 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (1) , 109-110
https://doi.org/10.1109/PROC.1968.6178

Abstract

The breakdown field strength in plasma oxidized Al2O3films ranging in thickness from 15 to 600 Å, was observed to exhibit a dependence proportional to s^-1/4, where s is oxide thickness. This variation was found to be temperature independent.

Keywords

ELECTRIC BREAKDOWN
PLASMA MEASUREMENTS
PLASMA TEMPERATURE
OXIDATION
THICKNESS MEASUREMENT
ALUMINUM OXIDE
ELECTRONS
DIELECTRIC THIN FILMS
CAPACITANCE MEASUREMENT
GLOW DISCHARGES

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