Pressure studies of impurity levels in AlxGa1-xAs
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 290-292
- https://doi.org/10.1088/0268-1242/4/4/033
Abstract
The authors present a study of the deep and shallow donor levels under hydrostatic pressure. The shallow levels follow the conduction bands, while the deep levels are strongly sublinear with pressure. The temperature dependence of the intensities and energies is used to obtain an energy level diagram of the deep levels at high pressures.Keywords
This publication has 5 references indexed in Scilit:
- A new model of deep donor centres in AlxGa1-xAsSemiconductor Science and Technology, 1987
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- High-pressure studies of GaAs-As quantum wells of widths 26 to 150 ÅPhysical Review B, 1986
- Photoluminescence study of acceptors in AlxGa1−xAsJournal of Applied Physics, 1982
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976