A Study of Layer Thickness and Interface Qualities of Strained InxGa1-xAs/GaAs Layers
- 1 January 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (1R) , 26-29
- https://doi.org/10.1143/jjap.31.26
Abstract
The relationships between the layer thickness and the corresponding interface qualities of strained InGaAs/GaAs quantum wells grown by low-pressure metalorganic chemical vapor deposition are investigated. The strain-induced phenomena are explained from the transmission electron microscopy (XTEM) images and low-temperature photoluminescence (PL) measurement. When the critical layer thickness of InGaAs was approached, extrinsic luminescence in the PL emission spectra and an interface wavy effect in the XTEM image were observed. A new “3-dimensional confinement model” is proposed to explain these phenomena satisfactorily.Keywords
This publication has 16 references indexed in Scilit:
- Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopyApplied Physics Letters, 1989
- Photoluminescence characterisation of InGaAs/GaAs quantum well structuresSemiconductor Science and Technology, 1988
- Structure of lattice-strained InxGa1−xAs/GaAs layers studied by transmission electron microscopyApplied Physics Letters, 1988
- Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1988
- The effects of strain on the growth of lattice mismatched superlatticesJournal of Crystal Growth, 1988
- A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffractionJournal of Vacuum Science & Technology B, 1987
- Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructuresJournal of Applied Physics, 1986
- Growth of GaxIn1−xAs by low-pressure metalorganic vapor-phase epitaxyJournal of Applied Physics, 1986
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974