Capacitance Observations of Landau Levels in Surface Quantization

Capacitance observations of Landau levels in a two-dimensional electron gas induced in the inversion layer on a (100) surface of $p$-type silicon are reported. Evidence for surface quantization and the associated lifting of the spin and valley degeneracy are presented. An observed increase in the carrier threshold with increasing magnetic field is shown to be further evidence of surface quantization.