Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor
- 9 September 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (11) , 1602-1604
- https://doi.org/10.1063/1.117044
Abstract
We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n‐AlGaAs/p‐GaAs/n‐InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused primarily by strain‐induced defects which impede the transport of holes in the collector. The lifetime of holes in the InGaAs/GaAs collector is found to be negligibly affected by the underlying misfit dislocations in the InGaAs/GaAs collector. The reduction in the local electron‐beam‐induced current signal by the dislocations is less than ∼20%, indicating that these defects have a minor impact on the overall device performance.Keywords
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