Channeling in low energy boron ion implantation
- 15 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4) , 404-406
- https://doi.org/10.1063/1.94790
Abstract
The effects of both planar and axial channeling on the profile of 5‐keV boron ions implanted into (100) oriented silicon wafers are demonstrated. A tilt angle of 12° from the (100) axis in a ‘‘random’’ crystallographic direction is required to minimize the (100) axial channeling tail. It is also shown that the effect of channeling along 100 planar channels produces a negligible addition to the channeling tail, whereas channeling along the (110) planar channels produces a measurable contribution. Implantation through a thin, 8‐nm, thermally grown silicon dioxide layer with the ion beam aligned along the (100) direction produces an ion profile comparable to an offset of 9° in a random direction.Keywords
This publication has 3 references indexed in Scilit:
- Channeling effect of low energy boron implant inIEEE Electron Device Letters, 1983
- Low energy range distributions of 10B and 11B in amorphous and crystalline siliconNuclear Instruments and Methods in Physics Research, 1982
- Alignment effects on implantation profiles in siliconRadiation Effects, 1980