Spectral linewidth of AlGaAs/GaAs surface-emitting laser

12 October 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (21) , 1444-1446
https://doi.org/10.1049/el:19890965

Abstract

The spectral linewidth Δv of a vertical cavity surface-emitting laser was measured for the first time. The linewidth measured by a delayed self-homodyne method was 50 MHz at an output power of 1.4 mW under room-temperature CW operation. The linewidth we obtained was quite narrow in spite of the short cavity configuration of the SE laser. This narrow linewidth is attributed to the high-reflectivity mirrors. The measured linewidth is in good agreement with theoretical values.

Keywords

SURFACE-EMITTING LASER
ALGAAS-GAAS
SHORT CAVITY CONFIGURATION
DELAYED SELF-HOMODYNE METHOD
SEMICONDUCTOR LASERS
SPECTRAL LINEWIDTH
VERTICAL CAVITY
ROOM-TEMPERATURE CW OPERATION
1.4 MW
HIGH-REFLECTIVITY MIRRORS

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