A model for the capacitance—Voltage characteristics of MODFET's

1 December 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (12) , 2422-2427
https://doi.org/10.1109/t-ed.1987.23330

Abstract

Using Fermi-Dirac statistics, a model for the gate capacitance-voltage characteristics of MODFET's is developed that includes not only the capacitance component due to two-dimensional electron gas density but also the capacitance component due to donor neutralization. To analytically solve Poisson's equation with the Fermi-Dirac statistics, we analyzed the theory by using two regions (the complete ionization region and the partial ionization region of doped impurities). Using the obtained C-V relationships, the gate capacitance is calculated with the numerical calculation method. The results are in good agreement with experimental data.

Keywords

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