Analytical model for p – n junctions under high-injection conditions
- 9 September 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (18) , 509-510
- https://doi.org/10.1049/el:19710344
Abstract
An analytical approximation for space-charge layers at abrupt p–n junctions under high-injection conditions is presented. In this approximation, an exponential decay of the charge on both sides of the junction is assumed. Predictions from this model are found to be in good agreement with the results of exact numerical solutions.Keywords
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