Silicon nitride for the improvement of silicon inversion layer solar cells
- 30 September 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (9) , 863-868
- https://doi.org/10.1016/0038-1101(81)90103-9
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- High temperature annealing of mnos devices and its effect on si-nitride stress, interface charge density and memory propertiesJournal of Electronic Materials, 1979
- 655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cellsApplied Physics Letters, 1979
- Mechanical Stress and Electrical Properties of MNOS Devices as a Function of the Nitride Deposition TemperatureJournal of the Electrochemical Society, 1978
- New TiOx-MIS and Si02-MIS silicon solar cellsIEEE Transactions on Electron Devices, 1978
- Silicon solar cells using natural inversion layers found in thermally-oxidized p-siliconSolid-State Electronics, 1977
- Optical Properties of Silicon NitrideJournal of the Electrochemical Society, 1973
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICONApplied Physics Letters, 1968