Monolithic vertical-cavity laser/p-i-n photodiode transceiver array for optical interconnects
- 1 November 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (11) , 1530-1532
- https://doi.org/10.1109/68.726739
Abstract
The design, fabrication, and characterization of a 16-element monolithic 850-nm vertical-cavity laser/p-type-intrinsic-n-type (VCL/p-i-n) photodiode transceiver array for optical interconnects are described. The packaged VCL/p-i-n array exhibits excellent array uniformity over a large temperature range. Packaged VCLs display up to 1 mW of single-mode power and a relative intensity noise below -120 dB/Hz for all currents above threshold at a measuring bandwidth of 2 GHz. The p-i-n photodiodes exhibit a responsivity of 0.535 A/W and a -3-dB bandwidth of 2.3 GHz. A microlens array integrated into the packaged VCL/p-i-n device decreases the VCL beam divergence six to seven times. Polarization control with a mean rejection ratio of 22 dB across the VCL array is achieved with the use of oval aperture VCLs.Keywords
This publication has 5 references indexed in Scilit:
- Integrated VCL/PIN arrays for optical computing applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis of a vertical-cavity surface-emitting laser-based bidirectional free-space optical interconnect.Applied Optics, 1997
- Analysis of a three-dimensional computer optical scheme based on bidirectional free-space optical interconnectsOptical Engineering, 1995
- Dynamic holographic interconnects that use ferroelectric liquid-crystal spatial light modulatorsApplied Optics, 1994
- Surface-emitting microlasers for photonic switching and interchip connectionsOptical Engineering, 1990