Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field
- 7 March 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 88 (12) , 126803
- https://doi.org/10.1103/physrevlett.88.126803
Abstract
We report a strong Kondo effect (Kondo temperature ) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.
Keywords
All Related Versions
This publication has 26 references indexed in Scilit:
- Kondo effect induced by a magnetic fieldPhysical Review B, 2001
- Kondo physics in carbon nanotubesNature, 2000
- Conduction through a Quantum Dot near a Singlet-Triplet TransitionPhysical Review Letters, 2000
- Enhancement of Kondo Effect in Quantum Dots with an Even Number of ElectronsPhysical Review Letters, 2000
- Kondo effect in an integer-spin quantum dotNature, 2000
- Quantum Dots with Even Number of Electrons: Kondo Effect in a Finite Magnetic FieldPhysical Review Letters, 2000
- A Tunable Kondo Effect in Quantum DotsScience, 1998
- Kondo effect in a single-electron transistorNature, 1998
- Correlated electron transport through a quantum dot: The multiple-level effectPhysical Review B, 1993
- Resistance Minimum in Dilute Magnetic AlloysProgress of Theoretical Physics, 1964