Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- 1 October 1950
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 29 (4) , 560-607
- https://doi.org/10.1002/j.1538-7305.1950.tb03653.x
Abstract
A theoretical analysis of the flow of added current carriers in homogeneous semiconductors is given. The simplifying assumption is made at the outset that trapping effects may be neglected, and the subsequent treatment is intended particularly for ap...Keywords
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