An integrated wide-band varactor-tuned Gunn oscillator
- 1 October 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 20 (10) , 863-865
- https://doi.org/10.1109/T-ED.1973.17759
Abstract
A report is made of a thin-film varactor-tuned Gunn effect oscillator in X band employing unencapsulated diodes. The Gunn device, which is an inverted mesa type, is mounted off the substrate on a copper header and this arrangement can dissipate 7 W without the Gunn device suffering thermal damage. The varactor is a beam-lead silicon p+nn+IMPATT diode connected in series with the Gunn device. A circulator is integrated with the oscillator to provide load isolation, and tuning ranges in excess of 2 GHz are reported. Good agreement exists between calculated and measured values of oscillator tuning range.Keywords
This publication has 0 references indexed in Scilit: