High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers

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Abstract
GaInAsP/InP buried-heterostructure (BH) optical intensity modulators have been fabricated by the use of Fe-doped semi-insulating InP burying layers. The reduction of a parasitic capacitance due to the semi-insulating burying layers realised a wide modulation bandwidth of 11.2GHz. At a wavelength of 1.53/μm, an attenuation ratio of 20 dB at 26°C was achieved with an applied voltage of −8.5 V.