Electron trapping in very thin thermal silicon dioxides

1 January 1981

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 396-399
https://doi.org/10.1109/iedm.1981.190097

Abstract

Constant current stress and C-V techniques have been used to study the electron trapping phenomenon in thermally grown thin SiO2films A mathematical model based on trap filling and trap generation is proposed and the capture cross-sections, trap generation rates, the centroids, and the densities of the pre-existing and generated traps are determined as functions of the current density. The generation of interface states is also characterized.

Keywords

ELECTRON TRAPS
SILICON COMPOUNDS
THERMAL STRESSES
CAPACITANCE-VOLTAGE CHARACTERISTICS
MATHEMATICAL MODEL
FILLING
CURRENT DENSITY
CHARACTER GENERATION
DIELECTRIC THIN FILMS
VOLTAGE

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