Temperature dependence of electron-capture aftereffects in the semiconductorIn2O3

We present a series of measurements of a fluctuating perturbation in the angular correlation of ${}_{}{}^{111}{}_{}{}^{}\mathrm{Cd}$ in ${\mathrm{In}}_2$ ${\mathrm{O}}_3$ powder samples. We analyze the temperature dependence of the associated hyperfine parameters and conclude that this perturbation arises from "aftereffects" following the electron capture of ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$. We discuss the connection of perturbed-angular-correlation measurements of aftereffects with local electric properties at impurity sites of semiconductors.