Enhancement of defect-induced Raman modes at the fundamental absorption edge of electron-irradiated GaAs
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 7349-7352
- https://doi.org/10.1103/physrevb.33.7349
Abstract
Resonant Raman scattering in electron-irradiated GaAs has been studied. Enhancements in the scattering cross section of both intrinsic and defect-induced phonon modes at the fundamental absorption edge are reported. The experimental results are compared quantitatively with theory. A new scattering mechanism involving elastic scattering between electrons and defects is proposed to explain the resonance of the defect-induced Raman modes.Keywords
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