The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance

1 March 1988

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology B

Vol. 6 (2) , 678-681
https://doi.org/10.1116/1.584389

Abstract

Ga_0.47In_0.53As–Al_0.48In_0.52As high‐electron mobility transistors (HEMT’s) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thickness) on conductivity is examined. Device characteristics are examined as a function of active channel thickness. Reduced output conductance is observed for a 200 Å channel, but with a reduced transconductance.

Keywords

DESIGN
EPITAXIAL LAYERS
THICKNESS
ELECTRIC CONDUCTIVITY
PERFORMANCE
GAIN
TRANSISTORS
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
INDIUM ARSENIDES
ELECTRICAL PROPERTIES
THIN FILMS
(GA
IN)AS
(AL

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