Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor deposition
- 1 May 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (3) , 1134-1139
- https://doi.org/10.1116/1.586827
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: