Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding
- 28 June 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 193-196
- https://doi.org/10.1016/s0022-0248(01)00661-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmapIEEE Journal of Selected Topics in Quantum Electronics, 1996
- Low temperature wafer direct bondingJournal of Microelectromechanical Systems, 1994
- Applications of Quantum Semiconductor StructuresPublished by Elsevier ,1991
- GaAs/AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etchingApplied Physics Letters, 1990