Integration of waveguides and photodetectors in SiGe for 1.3 /spl mu/m operation
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (1) , 59-61
- https://doi.org/10.1109/68.265889
Abstract
The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for /spl lambda/=1.3 /spl mu/m. The maximum bandwidth is 2 GHz.Keywords
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