Simultaneous CW Operation of 5-Wavelength Integrated GaInAsP/InP DFB Laser Array with 50 Å Lasing Wavelength Separation
- 1 December 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (12A) , L904-906
- https://doi.org/10.1143/jjap.23.l904
Abstract
The simultaneous CW operation of a 5-wavelength integrated GaInAsP/InP DFB laser array has been realized. The average lasing wavelength separation was 49 Å, which was in very good agreement with the designed value. Threshold currents were 57 to 75 mA and differential quantum efficiencies were 11 to 21%. A simultaneous CW operation was obtained at up to 40°C with each stable single longitudinal mode. It was found that the threshold current was almost independent of wavelength within a range of 500 Å on the long wavelength side of the spontaneous emission peak and could be reduced to as little as 20 mA by fabricating deep, uniform gratings and by increasing the crystal homogeneity of the wafer.Keywords
This publication has 3 references indexed in Scilit:
- Monolithic integration of low-threshold-current 1.3 μm GaInAsP/InP DFB lasersElectronics Letters, 1984
- High-quality 1.3 μm GaInAsP/InP BH-DFB lasers with first-order gratingsElectronics Letters, 1983
- A frequency-multiplexing light source with monolithically integrated distributed-feedback diode lasersIEEE Journal of Quantum Electronics, 1977