Room-temperature operation of a transverse-distributed-feedback cavity laser

19 August 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (17) , 745-746
https://doi.org/10.1049/el:19820505

Abstract

A new type of transverse-distributed-feedback cavity laser is proposed. A threshold current of a two-dimensional mode is 190 mA, and an output power of 30 mW is obtained at 1.5I_th. The far-field pattern is stable up to a measured current of 2.1I_th.

Keywords

THRESHOLD CURRENT
TWO-DIMENSIONAL MODE
ROOM TEMPERATURE OPERATION
SEMICONDUCTOR LASER
FAR-FIELD PATTERN
OUTPUT POWER
GAALAS-GAAS LASER
TRANSVERSE-DISTRIBUTED-FEEDBACK CAVITY LASER

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