Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
- 30 April 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4) , 476-480
- https://doi.org/10.1016/s0022-0248(02)02275-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Laser interferometry as a diagnostic tool for the fabrication of reactive ion etching-edge-emitting lasersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wellsIEEE Journal of Selected Topics in Quantum Electronics, 2002
- Piezoelectric effects in semiconductor heterostructures: applications and consequencesMicroelectronics Journal, 2002
- Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substratesApplied Physics Letters, 2002
- Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting DevicesPhysica Status Solidi (a), 2001
- Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN filmsJournal of Applied Physics, 2001
- Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devicesMaterials Science and Engineering: B, 2001
- Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxyJournal of Crystal Growth, 2000
- High optical quality AlInGaN by metalorganic chemical vapor depositionApplied Physics Letters, 1999
- Effects of macroscopic polarization in III-V nitride multiple quantum wellsPhysical Review B, 1999