X and Ku band high power GaAs FETs
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 847-850
- https://doi.org/10.1109/mwsym.1988.22165
Abstract
Internally matched GaAs FETs, with output powers of more than 10 W have been developed for the 10.7-11.7- and 14.0-14.5-GHz bands. These devices, with a total gate width of 32 mm, consist of two chips that are fabricated by direct ion implantation and chemical dry etching. At 14.25 GHz, the Ku-band device has achieved an output power of 41 dBm, a power gain of 5 dB and a power-added efficiency of 21%. At 11.2 GHz, the X-band device has delivered 41.2 dBm, 5.8 dB and 25%, respectively, at the 1-dB gain compression point.Keywords
This publication has 2 references indexed in Scilit:
- 2.5-Watt and 5- Watt Internally Matched GaAs FETs for 10.7-11.7 and 14-14.5 GHz BandsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-Power Power GaAs and High-Efficiency Ion-Implanted FETs for C and X BandsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005