Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor
- 17 June 2002
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 17 (7) , 708-715
- https://doi.org/10.1088/0268-1242/17/7/313
Abstract
The hole mobility has been measured in a metal-oxide semiconductor field-effect transistor featuring a 6 nm Si0.5Ge0.5 conduction channel. Physical characterization and analysis of the electrical properties confirm that the channel is fully strained. At a total sheet carrier concentration, ps, of 1012 cm−2, the 300 K mobility of 220 cm2 V−1 s−1 is double that of a Si control device (and at 4 K has a peak value of 1800 cm2 V−1 s−1). This improvement is largely maintained up to ps ~ 1013 cm−2, despite the onset of conduction in a parallel Si channel at the oxide interface. Comparing the measurements with calculations suggests that the mobility is affected more strongly by interface roughness than by alloy scattering.Keywords
This publication has 31 references indexed in Scilit:
- Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layersApplied Physics Letters, 2001
- SiGe heterostructure CMOS circuits and applicationsSolid-State Electronics, 1999
- High-mobility Si and Ge structuresSemiconductor Science and Technology, 1997
- New Approach in Equilibrium Theory for Strained Layer RelaxationPhysical Review Letters, 1994
- SiGe-channel heterojunction p-MOSFET'sIEEE Transactions on Electron Devices, 1994
- Strain relaxation kinetics in Si1−xGex/Si heterostructuresJournal of Applied Physics, 1991
- A self-consistent solution of Schrödinger–Poisson equations using a nonuniform meshJournal of Applied Physics, 1990
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985