Conductivity and mobility in very thin epitaxial NiSi2 layers

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Abstract
Epitaxial NiSi2 layers (type B) of increasing thickness (1.5–10 nm) have been produced on Si(111)7×7. The low-energy electron diffraction pattern shows silicide formation with at least 3 monolayers (ML) of Ni. Point defects in the film and steps at its surface are derived from spot profile. The conductance of the film is described by a constant bulk mobility with the first two monolayers of Ni not contributing to the metallic conductivity. Due to protection with SiO no change was observed after transfer through air into a liquid He cryostat. The resistance decreases with T to a residual value with a slight increase for T<30 K. Weak localization is also seen from transversal magnetoconductance, as derived from temperature and field strength dependence at T<40 K. Starting with 3 ML of Ni it is possible to produce thin, coherent, homogeneous, defect-free silicide layers with high mobility and well-defined electrical parameters.

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