Depletion-layer calculations of a double-diffused junction
- 1 September 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (9) , 1839-1841
- https://doi.org/10.1109/t-ed.1980.20113
Abstract
The depletion-layer width of a double-diffused or implanted-diffused junction has been calculated for the case of a Gaussian/Gaussian profile. Closed-form solutions of the potential difference between the two edges of the depletion layer are obtained by integrating the Poisson's equation and equating the positive and negative charges in the depletion layer.Keywords
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