New Etching System with a Large Diameter Using Electron Beam Excited Plasma
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S)
- https://doi.org/10.1143/jjap.31.4357
Abstract
A new etching system using electron-beam-excited plasma (EBEP) has been developed. This EBEP system is able to steadily produce a high-density plasma with a large diameter by introducing a high-current low electron beam into the etching chamber. The nonuniformity of plasma density and floating potential in an 8-inch wafer are improved up to ±2.5% and ±2 V, respectively. Anisotropic etching of n+-poly-Si in a pure Cl2 plasma is achieved with a high etch rate of 360 nm/min. The etching selectivity is 40 for poly-Si/photoresist and 150 for poly-Si/SiO2. These experimental results show that the EBEP etching system is suitable for manufacturing advanced ULSI.Keywords
This publication has 2 references indexed in Scilit:
- High-rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma systemJournal of Vacuum Science & Technology B, 1988
- New high current low energy ion sourceJournal of Vacuum Science & Technology B, 1987