Experimental demonstration and modelling of optoelectronic mixing and digital modulation in a single InP photo heterojunction bipolar transistor
- 8 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 203-206
- https://doi.org/10.1109/mwp.2000.889823
Abstract
We describe microwave signal generation and digital modulation by optoelectronic mixing in a single InGaAs-InP heterojunction bipolar phototransistor. Modeling and experimental verification are demonstrated for 10 and 45 GHz signals modulated at rates up to 2.5 Gb/s.Keywords
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