Profiling of ultra-shallow complementary metal–oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometry
- 1 January 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (1) , 533-539
- https://doi.org/10.1116/1.586387
Abstract
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