Electrically pumped hybrid evanescent Si/InGaAsP lasers

Hybrid Si/III–V, Fabry–Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III–V gain material for the first time to our knowledge. The lasing threshold current of $300\text{-}\mu \mathrm{m}$-long devices was as low as $24\mathrm{mA}$, with a maximal single facet output power of $4.2\mathrm{mW}$ at $15°\mathrm{C}$. Longer devices achieved a maximal single facet output power as high as $12.7\mathrm{mW}$, a single facet slope efficiency of 8.4%, and a lasing threshold current density of $1\mathrm{kA}∕{\mathrm{cm}}^2$. Continuous wave laser operation was obtained up to $45°\mathrm{C}$. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.