Electronic Origin of Distortion of Oxygen Octahedron in (La1-xMx)2CuO4 with M=Ca, Sr and Ba
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4A) , L512
- https://doi.org/10.1143/jjap.26.l512
Abstract
In the high T c material (La1-x M x )2CuO4 the oxygen octahedral cage surrounding a Cu atom is strongly distorted, and the change of T c accompanied by substitution of La with M(=Ca, Sr and Ba) is correlated with the Cu-O distance in the basal ab plane. The microscopic origin of the large distortion of the oxygen octahedron is discussed.Keywords
This publication has 7 references indexed in Scilit:
- Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited FilmsJapanese Journal of Applied Physics, 1987
- Crystallochemical Studies on the High Temperature Superconductors La2-xMxCuO4-y (M=Ba and Sr)Japanese Journal of Applied Physics, 1987
- Electronic Property of La2CuO4 with Two Different Layered StructuresJapanese Journal of Applied Physics, 1987
- Oxygen defect K2NiF4-type oxides: The compoundsJournal of Solid State Chemistry, 1981
- Linear methods in band theoryPhysical Review B, 1975
- The structure of La2CuO4 and LaSrVO4Journal of Solid State Chemistry, 1973
- Effective ionic radii in oxides and fluoridesActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1969