New Charge-Storage Effect in SiliconDiodes at Cryogenic Temperatures
- 21 August 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 41 (8) , 576-579
- https://doi.org/10.1103/physrevlett.41.576
Abstract
A peak was observed in the characteristic of silicon diodes at liquid-helium temperatures when the voltage was changed rapidly in the reverse-bias direction. The size and structure of the peak were dependent upon the integrated incident light, or forward injection. The intrinsic rise time of the peak was found to be less than 0.3 nsec.
Keywords
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