An ac method of Seebeck coefficient measurement by the use of lasers
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (1) , 9-10
- https://doi.org/10.1063/1.90161
Abstract
The frequency dependence of thermoelectric power and the resistivity change induced by the infrared radiation from a chopped laser beam is used to estimate the Seebeck coefficient of semiconductor samples. The use of data on temperature dependence of resistivity eliminates the need for the measurement of rapidly varying temperature and its gradient within the sample. The method is tested for p‐Ge samples and good agreement is obtained with the results of usual dc measurement.Keywords
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