Liquid-phase-epitaxial growth of Inp/InGaAsP/InGaAs buried-structure avalanche photodiodes
- 16 February 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (4) , 165-167
- https://doi.org/10.1049/el:19840111
Abstract
An InP/InGaAsP/InGaAs avalanche photodiode with an effective guard-ring structure has been successfully fabricated. The diode has a planar structure with an n-InP layer buried by n−-InP in the multiplication region The structure has been grown on a (111)A-oriented InP substrate by two-step growth of liquid-phase epitaxy. Prior to the second growth of n−-InP a meltback technique was used to reduce dark current.Keywords
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