Surface Barrier Diodes on Semiconducting KTaO3
- 1 January 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (1) , 353-359
- https://doi.org/10.1063/1.1708981
Abstract
A combination of capacitance, I‐V, and photoresponse data is presented for metal‐semiconductor junctions on KTaO3. Results are in good agreement with the Schottky theory for doping levels below 1018 cm−3. Substantial deviations occur for higher doped samples. Measured barrier potentials do not correlate with either the metal work function or the metal electronegativity, and appear to be strongly affected by strains at the metal‐semiconductor interface. In the case of Cu and Au, structure in the photoresponse data associated with an energy‐dependent density‐of‐states is observed.This publication has 22 references indexed in Scilit:
- Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon SurfacesJournal of Applied Physics, 1965
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Localized Mode Measurements of Boron- and Lithium-Doped SiliconJournal of Applied Physics, 1965
- ELECTRICAL TRANSPORT AND CONTACT PROPERTIES OF LOW RESISTIVITY n-TYPE ZINC SULFIDE CRYSTALSApplied Physics Letters, 1965
- SURFACE STATES ON SEMICONDUCTOR CRYSTALS; BARRIERS ON THE Cd(Se:S) SYSTEMApplied Physics Letters, 1965
- Evaporated Metallic Contacts to Conducting Cadmium Sulfide Single CrystalsJournal of Applied Physics, 1964
- Attenuation Length Measurements of Hot Electrons in Metal FilmsPhysical Review B, 1962
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942
- On the Surface States Associated with a Periodic PotentialPhysical Review B, 1939